SiC Schottky Rectifiers optimized for ≥ 250 ° C operation with low junction capacitance

Electrical Characteristics of Industry’s first commercially available 1200 V rated SiC Schottky rectifiers, specially designed for operation at ≥ 250 °C are presented. These high-temperature SiC rectifiers fabricated in 1, 5, and 20 A current ratings feature reverse leakage currents of < 3 mA/cm at 1200 V up to temperatures as high as 300 °C. GeneSiC’s 1200 V/20A High Temperature Schottky (designated SHT) rectifier offers a 10x reduction in leakage current and a 23% reduction in junction capacitance when compared to its nearest SiC Schottky rectifier competitor. In addition, these SHT rectifiers demonstrate superior surge-current ratings, and temperatureindependent switching capability up to their rated junction temperatures.